SK hynix
Mass ProductionSK hynix DDR5 RDIMM 96GB
96 GB DDR5 RDIMM using 24 Gb monolithic dies, raising per-socket capacity by 50% over 64 GB modules at up to 6400 MT/s.
DDR5 RDIMM
Micron 1β-node 96 GB RDIMM built on monolithic 24 Gb die

Micron · RDIMM · Image: micron.com
96 GB DDR5 RDIMM on Micron's 1β process, delivering non-binary capacity scaling for memory-bound server workloads.
Product briefing
Micron's 96 GB DDR5 RDIMM is manufactured on the company's 1β (1-beta) DRAM node using monolithic 24 Gb die, avoiding stacked packaging at this capacity point. The result is a non-binary capacity step that lets operators right-size memory between 64 GB and 128 GB module tiers.
Micron positions the module for data center consolidation, in-memory analytics, and AI data-preparation pipelines. It runs at up to 6400 MT/s at 1.1 V with on-die ECC, and is sampled and qualified through Micron's standard server platform validation program.
Data sheet
| Interface | DDR5, 288-pin RDIMM |
|---|---|
| Form Factor | RDIMM |
| Capacities | 48 GB, 96 GB |
| Data Rate | Up to 6400 MT/s |
| Organization | 2Rx4, ECC |
| Voltage | 1.1 V |
| DRAM Type | Micron 1β 24 Gb DDR5 die |
| Operating Temp | 0°C to 85°C |
Deployed in
Cross-reference
SK hynix
Mass Production96 GB DDR5 RDIMM using 24 Gb monolithic dies, raising per-socket capacity by 50% over 64 GB modules at up to 6400 MT/s.
Samsung
Mass Production64 GB DDR5 RDIMM from Samsung Semiconductor, qualified across major server platforms at up to 6400 MT/s.
Micron
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