SK hynix
Mass ProductionSK hynix LPDDR5X
LPDDR5X at 8533 Mbps per pin in packages up to 16 GB, powering flagship smartphones and edge AI devices.
8 GB12 GB16 GB8533 Mbps
LPDDR
Samsung LPDDR5X
High-speed LPDDR5X scaling to 10.7 Gbps for mobile and edge AI platforms
Mass Production10.7 GbpsSamsung
Samsung · FBGA / PoP · Image: samsung.com
Samsung LPDDR5X in 12 nm-class process, shipping at 8533 Mbps with 10.7 Gbps grades sampling for AI-era devices.
- Interface
- LPDDR5X
- Form factor
- FBGA / PoP
- Capacities
- 12 GB16 GB24 GB32 GB
Enquire about this product Datasheet — coming soon
Product briefing
On the record.
Samsung LPDDR5X ships in volume at 8533 Mbps with next grades sampling at up to 10.7 Gbps per pin, built on a 12 nm-class DRAM process. Package capacities reach 32 GB, positioning the part for AI smartphones and LPDDR-based notebook and server designs.
Samsung emphasizes thermal headroom and power efficiency: improved thermal resistance in thin packages supports sustained camera and gaming workloads, while low-voltage rails and refined self-refresh reduce standby drain. Automotive-qualified variants extend the line into IVI and ADAS domains.
Data sheet
Specifications
| Interface | LPDDR5X |
|---|---|
| Data Rate | 8533 Mbps (10.7 Gbps sampling) |
| Package Capacities | 12 GB, 16 GB, 24 GB, 32 GB |
| Process | 12 nm-class |
| Voltage | 1.05/0.9/0.5 V rails |
| Package | POP / discrete FBGA |
| Operating Temp | -25°C to 85°C (auto grades available) |
Deployed in
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