Samsung
Mass ProductionSamsung LPDDR5X
Samsung LPDDR5X in 12 nm-class process, shipping at 8533 Mbps with 10.7 Gbps grades sampling for AI-era devices.
LPDDR
8533 Mbps low-power DRAM for flagship mobile and on-device AI

SK hynix · FBGA / PoP · Image: skhynix.com
LPDDR5X at 8533 Mbps per pin in packages up to 16 GB, powering flagship smartphones and edge AI devices.
Product briefing
SK hynix LPDDR5X runs at 8533 Mbps per pin — bandwidth that on-device AI workloads such as camera scene inference and local language models draw on directly. Packages scale to 16 GB, and HKMG process refinements cut operating power versus prior LPDDR5 generations.
Beyond flagship smartphones, LPDDR5X is designed into thin-and-light notebooks, XR headsets, and automotive compute where the power budget rules out standard DDR. Standard 0.5 V-class VDDQ operation and dynamic voltage-frequency scaling stretch battery life under bursty mobile workloads.
Data sheet
| Interface | LPDDR5X |
|---|---|
| Data Rate | Up to 8533 Mbps/pin |
| Package Capacities | 8 GB, 12 GB, 16 GB |
| Voltage | 1.05/0.9/0.5 V rails |
| Package | POP / discrete FBGA |
| Features | DVFS, deep sleep modes |
| Operating Temp | -25°C to 85°C (auto grades available) |
Deployed in
Cross-reference
Samsung
Mass ProductionSamsung LPDDR5X in 12 nm-class process, shipping at 8533 Mbps with 10.7 Gbps grades sampling for AI-era devices.
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