SK hynix
Mass ProductionSK hynix DDR5 24Gb Component
24 Gb DDR5 component on SK hynix's 1b-nm node, the die behind 48 GB and 96 GB non-binary module capacities.
24 GbNon-binary
DDR5
Samsung DDR5 32Gb Component
Industry-leading 32 Gb monolithic DDR5 die for next-density modules
Sampling32GbNewSamsung
Samsung · FBGA component · Image: samsung.com
32 Gb DDR5 die enabling 128 GB modules without TSV stacking, targeting high-capacity server memory.
- Interface
- DDR5
- Form factor
- FBGA component
- Capacities
- 32 Gb
Enquire about this product Datasheet — coming soon
Product briefing
On the record.
Samsung's 32 Gb DDR5 component doubles monolithic die density over the 16 Gb generation, enabling 128 GB RDIMMs without through-silicon-via stacking and opening a path to 1 TB-class modules with stacked packages. Higher density per die also reduces power per gigabyte at the module level.
The die targets hyperscale and enterprise server memory where capacity growth outpaces channel count. Samples support standard DDR5 speed bins with on-die ECC; availability follows Samsung's server platform qualification cadence.
Data sheet
Specifications
| Interface | DDR5 |
|---|---|
| Density | 32 Gb |
| Organization | x8 |
| Data Rate | Up to 6400 MT/s |
| Voltage | 1.1 V |
| Process | Samsung advanced node |
| Package | FBGA |
| Features | On-die ECC |
Deployed in
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