SK hynix
Mass ProductionSK hynix DDR5 24Gb Component
24 Gb DDR5 component on SK hynix's 1b-nm node, the die behind 48 GB and 96 GB non-binary module capacities.
DDR5
16 Gb DDR5 component for module and embedded board designs

SK hynix · FBGA component · Image: skhynix.com
16 Gb DDR5 DRAM component in x8/x16 organizations for OEM module manufacturing and embedded designs up to 6400 MT/s.
Product briefing
The 16 Gb DDR5 component is the building block of mainstream DDR5 modules and down-soldered embedded designs. SK hynix supplies the die in x8 and x16 organizations across standard speed bins to 6400 MT/s, with on-die ECC and decision-feedback equalization improving signal integrity at high data rates.
For embedded and networking OEMs, component-level sourcing enables memory-down layouts on routers, switches, and controller boards where DIMM sockets are impractical. Standard FBGA packaging and JEDEC-compliant timings simplify qualification across multiple board programs.
Data sheet
| Interface | DDR5 |
|---|---|
| Density | 16 Gb |
| Organization | x8, x16 |
| Data Rate | 4800–6400 MT/s |
| Voltage | 1.1 V |
| Package | FBGA |
| Features | On-die ECC, DFE |
| Operating Temp | 0°C to 95°C |
Cross-reference
SK hynix
Mass Production24 Gb DDR5 component on SK hynix's 1b-nm node, the die behind 48 GB and 96 GB non-binary module capacities.
Samsung
Sampling32 Gb DDR5 die enabling 128 GB modules without TSV stacking, targeting high-capacity server memory.
Samsung
Mass Production8 Gb DDR4-3200 component with extended availability for networking, industrial, and consumer designs.