SK hynix
Mass ProductionSK hynix DDR5 16Gb Component
16 Gb DDR5 DRAM component in x8/x16 organizations for OEM module manufacturing and embedded designs up to 6400 MT/s.
16 Gb
DDR5
SK hynix DDR5 24Gb Component
Non-binary 24 Gb DDR5 die enabling 48 GB and 96 GB module capacities
Mass ProductionNon-binarySK hynix
SK hynix · FBGA component
24 Gb DDR5 component on SK hynix's 1b-nm node, the die behind 48 GB and 96 GB non-binary module capacities.
- Interface
- DDR5
- Form factor
- FBGA component
- Capacities
- 24 Gb
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Product briefing
On the record.
SK hynix's 24 Gb DDR5 die introduced non-binary density scaling to volume DRAM production. Built on the 1b-nm node, it enables 48 GB and 96 GB modules from monolithic die, giving system designers a capacity step between binary tiers without TSV stacking cost.
The component ships in x8 organization at speed bins to 6400 MT/s and supports the full DDR5 feature set including on-die ECC. It is the basis of SK hynix's 96 GB RDIMM line and is available to OEMs building high-density custom modules.
Data sheet
Specifications
| Interface | DDR5 |
|---|---|
| Density | 24 Gb |
| Organization | x8 |
| Data Rate | Up to 6400 MT/s |
| Voltage | 1.1 V |
| Process | 1b-nm |
| Package | FBGA |
| Features | On-die ECC |
Deployed in
Cross-reference
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