Samsung
Mass ProductionSamsung UFS 4.0
UFS 4.0 managed NAND with up to 4,200 MB/s reads and double the power efficiency of UFS 3.1, in capacities to 1 TB.
256 GB512 GB1 TBFlagship
UFS
Samsung UFS 3.1
Proven UFS 3.1 storage for mid-range mobile and automotive platforms
Mass ProductionAutomotiveSamsung
Samsung · UFS BGA · Image: samsung.com
UFS 3.1 managed NAND at up to 2,100 MB/s reads, the volume storage tier for mid-range phones and automotive IVI.
- Interface
- UFS 3.1
- Form factor
- UFS BGA
- Capacities
- 128 GB256 GB512 GB
Enquire about this product Datasheet — coming soon
Product briefing
On the record.
UFS 3.1 remains the volume storage interface for mid-range smartphones, tablets, and automotive infotainment. Samsung's parts deliver around 2,100 MB/s sequential read with WriteBooster SLC caching and DeepSleep power states defined by the JEDEC UFS 3.1 standard.
Automotive-qualified grades with extended temperature ranges serve IVI and cluster systems, where UFS 3.1's maturity and multi-year supply outlook fit vehicle program timelines. Capacities span 128 GB to 512 GB in the standard UFS BGA footprint.
Data sheet
Specifications
| Interface | UFS 3.1 (MIPI M-PHY 4.1, 2 lanes) |
|---|---|
| Form Factor | UFS BGA (11.5 x 13 mm) |
| Capacities | 128 GB, 256 GB, 512 GB |
| Sequential Read | Up to 2,100 MB/s |
| Sequential Write | Up to 1,200 MB/s |
| NAND Type | Samsung V-NAND TLC |
| Features | WriteBooster, DeepSleep |
| Temp Grades | Consumer and automotive (-40°C to 105°C) |
Deployed in
Cross-reference
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