Samsung
Mass ProductionSamsung UFS 4.0
UFS 4.0 managed NAND with up to 4,200 MB/s reads and double the power efficiency of UFS 3.1, in capacities to 1 TB.
256 GB512 GB1 TBFlagship
UFS
SK hynix ZUFS 4.0
Zoned UFS 4.0 storage sustaining flagship smartphone performance over time
Mass ProductionZonedFlagshipSK hynix
SK hynix · UFS BGA · Image: skhynix.com
UFS 4.0 with zoned storage management, holding sequential reads above 4,000 MB/s while reducing long-term fragmentation.
- Interface
- UFS 4.0
- Form factor
- UFS BGA
- Capacities
- 256 GB512 GB1 TB
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Product briefing
On the record.
ZUFS 4.0 applies zoned storage concepts to mobile flash: data with similar lifetimes is grouped into zones, cutting write amplification and the performance decay that fragmentation causes over a phone's life. Sequential reads exceed 4,000 MB/s on the UFS 4.0 interface.
SK hynix positions ZUFS for flagship devices running on-device AI, where sustained storage responsiveness affects model load and app launch times measurably. Capacities span 256 GB to 1 TB in the standard UFS BGA footprint with low-power states preserved.
Data sheet
Specifications
| Interface | UFS 4.0 (MIPI M-PHY 5.0, 2 lanes) |
|---|---|
| Form Factor | UFS BGA (11.5 x 13 mm) |
| Capacities | 256 GB, 512 GB, 1 TB |
| Sequential Read | Up to 4,300 MB/s |
| Sequential Write | Up to 4,000 MB/s |
| NAND Type | SK hynix 238-layer 3D TLC |
| Feature | Zoned storage (ZUFS) |
| Operating Temp | -25°C to 85°C |
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